Gallium Nitride Applications in Power Electronics

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Published: May 30, 2020
DOI: https://doi.org/10.46962/forteijeeri.v1i1.2
Keywords:
Gallium Nitride, heterojunction field effect transistor, heterostructures, high electron mobility transistor, power transistor

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Allan Soriano
STMicroelectronics, 2755 Great America Way, Santa Clara, California, USA
Taufik Taufik
Electrical Engineering Department, Cal Poly State University, San Luis Obispo, California, USA
Rini Nur Hasanah
Universitas Brawijaya

Abstract

For just over 50 years doped Silicon (Si) has been the dominant semiconductor material for electronic circuit design and will continue its dominance for the foreseeable future for good reason. For now, competing or complementary process technologies lack the economies of scale to drive costs down in parallel with Si. In addition to development and manufacturing costs, Si process behavior and circuit performance are well understood and consistently predictable well into the deep submicron level. Current production Si channel lengths are about 22nm and 18µm for digital and analog integrated circuit manufacturers, respectively. Other than design specific characteristics, doped Si performance suffices for the vast majority of applications today. This paper will lightly cover Gallium Nitride (GaN) properties and the applications in power electronics. Additionally, GaN will also be compared with Silicon Carbide (SiC) which has very good characteristics for power electronics but is not a III-Nitride compound.

Article Details

How to Cite
Soriano, A., Taufik, T., & Hasanah, R. N. (2020). Gallium Nitride Applications in Power Electronics. Journal FORTEI-JEERI, 1(1), 1-8. https://doi.org/10.46962/forteijeeri.v1i1.2
Issue
Vol. 1 No. 1 (2020): FORTEI-JEERI
Section
Electronic and Microelectronics
Author Biographies

Allan Soriano, STMicroelectronics, 2755 Great America Way, Santa Clara, California, USA

Allan Soriano Allan Soriano received his B.S. in Electrical Engineering and M.S. in? Electrical Engineering both from California Polytechnic State University, San Luis Obispo. He has worked for several semiconductor companies in Silicon Valley including National Semiconductor, Maxim Integrated, National Semiconductor, Fairchild Semiconductor, Micrel Semiconductor, and Alpha & Omega Semiconductor. In December 2015 he joined STMicroelectronics where he is currently a Senior Staff Analog Applications Engineer. His primary areas of interests are analog circuits, signal path circuits and power supplies for consumer, industrial, medical, defense and automobile markets.

Taufik Taufik, Electrical Engineering Department, Cal Poly State University, San Luis Obispo, California, USA

Taufik Taufik received his Doctor of Engineering from Cleveland State University. He joined the Electrical Engineering department at Cal Poly State University in 1999 where he is currently a tenured Full Professor and the Director of Electric Power Institute. He received numerous teaching awards, most notably the 2012 Outstanding Teaching Award from the American Society of Engineering Education - Pacific Southwest Section. He is a Senior Member of IEEE and has industry experience with several international companies. His areas of research include power electronics, power systems, rural electrification, energy harvesting, renewable energy and smart grid. He has published over 200 technical papers and journals, reports, books, course readers, and served on the editorial review boards of several international journals.